top of page

The Audion MKII

Price

AED31,500.00

VAT Included

|

Free delivery in UAE

“The new AGD “THE AUDION” MkIII is one of the most Compact Amplifier designs in Hi-End Audio. “THE AUDION” Monoblock uses the unique GaNTube™ technology with Gallium Nitride MOSFET-based Power-Stage, fully enclosed in a Glass Tube. The Gallium Nitride Power MOSFETs, are the unique technology design advantage of AGD Productions and are the key to the reference level performance of all AGD amplifiers. With the seamless ability to drive any load, “THE AUDION” can deliver an unmatched sonic experience that only SET designs have been able to provide so far.

Now with 200W of power capability, a further improved voltage slew rate, and with 30,000µF of super audio grade capacitor reservoir, “THE AUDION” MkIII is uniquely capable of sustaining the most resounding bass punches while delivering the finest harmonic content of any vocal and musical instruments ensemble. Crafted in a minimalistic ultra-compact solid aluminum case, “THE AUDION” has one single-ended and one fully balanced XLR input, (40kOhm std. and 600ohm upon request), enabling a perfect match with any direct source units (DAC) or preamplifiers in the market.

AGD “THE AUDION” MkIII Monoblock amplifiers are built around the same output power stage used in the AGD Vivace. To achieve the highest performance in audio reproduction, AGD “THE AUDION” mono-block employs the same fundamental technology pioneered by the AGD Vivace design. As with the AGD Vivace, also in AGD “THE AUDION” MkIII design we were able to achieve nearly ideal switching waveforms, completely oscillation-free

Thus, preserving the harmonic content present in the original input signal and avoiding the superimposition of any additional artifacts that alter the overall spectrum and the spatiality of the music reproduction.The Gallium Nitride power MOSFETs used in the GaNTubeKT88MkIII power stage simplify this challenge through its ability to efficiently switch at much higher slew rates than any silicon-based power MOSFET, with almost perfect (book-like) behavior and oscillation-free switching.

Finish

Quantity

Specifications

PARAMETERS GaNTubeKT88 MkIII
Maximum Output Power at 0.1% THD+N, 1KHz, 4Ω. 200W
THD+N 10W/1KHz <0.005%
Output Power at 0.01% THD+N, 20Hz÷20KHz, 8Ω 100W
Bandwidth ±0.5db 0Hz÷50KHz
Input Impedance 40kohm (600ohm upon request)
Efficiency% >94%
Noise Floor (100mVRMS XLR Input) -140db
GaNTubeKT88 MkIII PWM Frequency 800kHz std.
Dimension 7.5×5.5×7.5
Weight 5lbs (2.5kg)
Input Voltage 110-240V (user selectable)
bottom of page